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| DSEP 9-06CR HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) IFAV = 9 A VRRM = 600 V trr = 15 ns VRSM V 600 VRRM V 600 Type A C ISOPLUS 247TM C A Isolated back surface * DSEP 9-06CR A = Anode, C = Cathode * Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 140C; rectangular, d = 0.5 tP < 10 s; rep. rating, pulse width limited by TVJM TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 2 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 50 9 tbd 80 0.5 0.2 -55...+175 175 -55...+150 A A A A mJ A C C C W V~ N g Features * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation * Low cathode to tab capacitance (< 25 pF) * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Epoxy meets UL 94V-0 * Isolated and UL registered E153432 Applications * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch TC = 25C 50/60 Hz RMS; IISOL 1 mA mounting force with clip typical 150 2500 20...120 6 Symbol IR Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 9 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 50 0.2 2.9 4.0 1 0.25 A mA V V K/W K/W ns 4.1 A VF RthJC RthCH trr IRM IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 10 A; -diF/dt = 100 A/s TVJ = 100C 15 3.5 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Dimensions see Outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 1-2 DSEP 9-06CR 30 A 25 IF 20 15 10 5 0 0 1 2 3 VF 4V5 0.0 100 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt TVJ = 150C TVJ = 100C TVJ = 25C Qr IF = 20 A IF = 10 A IF = 5 A 0.4 TVJ = 100C C V = 300 V R 0.3 IRM 20 A 15 IF = 20 A IF = 10 A IF = 5 A TVJ = 100C VR = 300 V 0.2 10 0.1 5 Fig. 1 Max. forward current IF versus VF 1.4 1.2 1.0 Kf 0.8 IRM 0.6 0.4 0.2 0.0 0 40 80 120 C 160 TVJ QR trr Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 45 ns 40 TVJ = 100C VR = 300 V IF = 20 A IF = 10 A IF = 5 A Fig. 3 Typ. peak reverse current IRM versus -diF/dt 80 V VFR 60 TVJ = 100C IF = 10 A 1.6 s 1.2 tfr 40 0.8 35 20 0.4 30 0 200 400 600 -diF/dt 800 A/s 1000 0 0 trr 200 400 0.0 600 A/s 1000 800 diF/dt VFR Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 10 K/W Fig. 5 Typ. recovery time trr versus -diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 1 ZthJC 0.1 0.01 0.0001 DSEP 9-06CR 0.001 0.01 0.1 1 t s 10 Fig. 7 Transient thermal resistance junction to case (c) 2004 IXYS All rights reserved 2-2 406 |
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